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Influence of UV and visible radiation on optical properties of coatings based on two-layer hollow particles of silicon dioxide and zinc oxide
Fedosov D., Neshchimenko V., Mikhailov M., Yuryev S.
Investigation of high-intensity implantation of titanium ions into silicon under conditions of the beam’s energy impact on the surface
Ivanova А., Vakhrushev D., Korneva О., Gurulev А., Varlachev V., Efimov D., Chernyshev А.
Study of silicon dioxide sputtering by a focused gallium ion beam
Podorozhniy О., Rumyantsev А., Volkov R., Borgardt N.
Formation of thin GaAs buffer layers on silicon for light-emitting devices
Lendyashova V., Ilkiv I., Borodin B., Kirilenko D., Dragunova A., Shugabaev T., Cirlin G.
Wave Functions of Positrons Channeling in [111] Direction of a Silicon Crystal
Syshchenko V., Tarnovsky A., Parakhin A., Isupov A.
Influence of Etching Modes on the Surface Topography of Silicon Plates and Their Adhesion Properties
Shcherbakova О., Muravyeva T., Tsukanov I.
Influence of the Substrate on the Photoluminescence Spectra of CaF2/Si Multilayer Structures
Velichko A., Ilyushin V., Krupin A., Filimonova N., Rudenko I.
Development of a Linear Position-Sensitive Scintillation Neutron Detector Based on ZnS(AG):6Li and Silicon Photomultipliers
Trunov D., Marin V., Sadykov R., Altynbaev E., Glushkova T.
Modeling of silicon irradiation with C60 ions and the role of the interaction potential
Karasev K., Strizhkin D., Titov A., Karaseov P.
On anomalous diffusion of fast electrons through the silicon crystal
Syshchenko V., Tarnovsky A., Dronik V.
Changes in the optical properties of coatings based on hollow ZnO/SiO2 particles under electron irradiation
Dudin A., Yurina V., Neshchimenko V., Mikhailov M., Yuriev S., Lapin A.
Dependence of the silicon carbide radiation resistance on the irradiation temperature
Lebedev A., Kozlovski V., Levinshtein M., Davydovskaya K., Kuzmin R.
On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties
Gridchin V., Komarov S., Soshnikov I., Shtrom I., Reznik R., Kryzhanovskaya N., Cirlin G.
Study of zinc implanted silicon nitride film
Privezentsev V., Firsov А., Kulikauskas V., Kiselev D., Senatulin B.
Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C60 Ions
Karasev K., Strizhkin D., Titov A., Karaseov P.
Control of Mask Erosion and Correction of Structure Profile in an Adapted Process of Deep Reactive Ion Etching of Silicon
Morozov O.
Simulation of Optical Parameters of Scintillation Position-Sensitive Detectors with Organic Light Guide
Trunov D., Marin V., Sadykov R., Altynbaev E., Glushkova T.
Self-Forming Silicon Nitride Nanomask and Its Applications
Smirnov V., Kibalov D., Lepshin P., Zhuravlev I., Smirnova G.
Formation of Zn-Containing Clusters in Implanted Si3N4 Film
Tereshchenko A., Privezentsev V., Firsov A., Kulikauskas V., Zatekin V., Voronova M.
Migration of Chromium on the Silicon Oxide Surface under the Strong Electric Field
Uvarov I., Mazaletsky L.
Microstrip Silicon Detector for Study of Ultra-Fast Processes at the Synchrotron Radiation Beam
Aulchenko V., Glushak A., Zhulanov V., Zhuravlev A., Kiselev V., Kudryavtsev V., Piminov P., Titov V., Shekhtman L.
Composition of silicon jointly doped with impurity atoms of gallium and phosphorus
Zikrillaev N., Koveshnikov S., Turekeev X., Ismailov B.
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