Methodology of Production of Photo-Sensitive Elements on Ptsi Basis

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

Schottky barrier diodes based on PtSi-Si contact can be used as detectors for registration of radiation in the infrared spectral region. However, the quantum efficiency of such receivers is very low compared to photodetectors based on narrow-gap semiconductors and p-n junctions. To increase the quantum efficiency of Schottky receivers, as it will be shown below, they are made in the form of the so-called “optical cavity”, and the thickness of PtSi should not exceed 100 A0. For this purpose we have developed a technological mode of multilayer metallization to obtain thin PtSi-Si contacts.

Full Text

Restricted Access

About the authors

E. A. Kerimov

Azerbaijan State Technical University

Author for correspondence.
Email: E_Kerimov.fizik@mail.ru
Azerbaijan, Baku

References

  1. Poole C., Owens F. Nanotechnologies. — Moscow: Technosphere, 2010. 336 p.
  2. Shapochkin M.B. Statistical physics / M.B. Shapochkin. M.: Publishing house of the Moscow Physical Society, 2004. 85 p.
  3. Goldade V.A., Pinchuk L.S. Physics of condensed state. Belarusian Science, 2009. 648 p.
  4. Parfenov V.V. Quantum-dimensional structures in electronics: optoelectronics. — Kazan: KSU, 2007. 16 p.
  5. Frolov V.D. Dimensional effect in the electron yield work / V.D. Frolov, S.M. Pimenov, V.I. Konov, E.N. Lubnin // Russian nanotechnologies. 2008. V. 3. P. 102.
  6. Kudrik Ya.Y., Shinkarenko V.V., Slepokurov V.S., Bigun R.I., Kudrik R.Y. Methods for Determination of Schottky Barrier Height from Volt-Ampere Characteristics // Optoelectronics and Semiconductor Technology, 2014, issue. 49, p. 21–28.
  7. Shik A. Ya., Bakueva L.G., Musikhin S.F., Rykov S.A. Physics of Low-Dimensional Systems. — Saint Petersburg: Nauka, 2001. 160 p.

Supplementary files

Supplementary Files
Action
1. JATS XML
2. Fig. 1. Technological scheme of fabrication of structures with BS on the basis of PtSi-Si contact

Download (1MB)

Copyright (c) 2024 Russian Academy of Sciences